Transistor-amplifier units for absorptiometry.
نویسندگان
چکیده
منابع مشابه
A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملA Modified Noise Analysis of a Common Source ̶ Common Gate Low Noise Transconductance Amplifier for Sub-micron Technologies
This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...
متن کاملUltra-Widband Distributed Amplifier Using Loss Compensation Technique on Both Input and Output Circuit
In this paper, we analyze a distributed amplifier based on input/output attenuation compensation. The analysis is carried out for a HEMT transistor; and a constant-k section filter is used to calculate the amplifier’s characteristics such as attenuation factor, phase constant and gain. The proposed design approach enables us to examine the tradeoff among the variables, which include the type an...
متن کاملNon-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کاملHigh Performance Amorphous Silicon Image Sensor for X-ray Diagnostic Medical Imaging Applications
Following our previous report concerning the development of a 127 μm resolution, 7.4 million pixel, 30 x 40 cm active area, flat panel amorphous Silicon (a-Si) x-ray image sensor, this paper describes enhancements in image sensor performance in the areas of image lag, linearity, sensitivity, and electronic noise. New process improvements in fabricating a-Si thin film transistor (TFT)/photodiode...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Journal of clinical pathology
دوره 9 3 شماره
صفحات -
تاریخ انتشار 1956